Diotec has introduced the SI02C120SMA, a 2A, 1200V Silicon Carbide Schottky diode designed for bootstrap circuits used with high-side SiC MOSFET gate drivers. The component is housed in a compact DO-214AA (SMA) package and is intended for high-frequency switching applications.

In high-side SiC MOSFET configurations, the source potential can rise to several hundred volts. The gate driver therefore needs a supply voltage sufficiently above the source potential. A bootstrap circuit provides a practical method of generating this floating supply, placing the bootstrap diode in an important role during repeated charging cycles.

The SI02C120SMA is designed specifically for this environment, combining high reverse-voltage capability with the fast switching characteristics associated with SiC Schottky technology.

High-Voltage Performance in a Compact Package

The diode provides a 1200V repetitive reverse-voltage rating and a 2A forward-current rating, with high repetitive peak-current capability. Its Schottky construction avoids conventional minority-carrier storage, helping achieve extremely low reverse-recovery behavior during high-frequency switching.

This can help reduce switching-related losses and unwanted current during rapid voltage transitions generated by modern SiC MOSFET power stages.

Key Features

◆ 1200V reverse-voltage capability — Supports high-voltage gate-drive environments.

★ 2A forward-current rating — Handles bootstrap charging requirements.

✦ SiC Schottky technology — Provides extremely low reverse-recovery behavior.

✓ High-frequency switching support — Suited to fast SiC power-conversion circuits.

◈ Compact SMA package — Helps conserve PCB space.

✧ High repetitive peak-current capability — Supports repetitive bootstrap operation.

➤ Designed for SiC MOSFET gate drives — Targets high-side switching architectures.

Applications

The SI02C120SMA is suitable for high-side SiC MOSFET gate drivers, solar inverters, power-factor-correction systems, auxiliary power supplies, telecom power equipment and other high-frequency power converters.

Supporting Fast-Switching SiC Power Electronics

The SI02C120SMA provides a compact solution for a specific challenge in high-side SiC MOSFET gate-drive design. Its high reverse-voltage rating and SiC Schottky construction make it suited to circuits where rapid switching, controlled charging and low recovery effects are important.

Diotec SI02C120SMA Supports High-Side SiC MOSFET Gate Drives

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