Ampleon has expanded its GaN RF power portfolio with the CLF09H4LS800P, an 800 W GaN-on-SiC HEMT optimized for the 902–928 MHz ISM band. The transistor is designed for high-power industrial, scientific and medical RF systems where efficient energy conversion and robust operation are essential.

High RF Output With Efficient Operation

The CLF09H4LS800P delivers 800 W continuous-wave output power and achieves more than 80% drain efficiency across its targeted frequency range. This efficiency can reduce power losses and associated thermal requirements in high-power RF equipment.

The device uses Ampleon's GaN-on-SiC technology and incorporates a pre-matched architecture, reducing the amount of external RF circuitry required around the transistor. The design is also specified to tolerate up to 10:1 VSWR load mismatch, providing resilience when operating conditions vary.

Performance Highlights

✦ 800 W continuous-wave RF output

✦ Above 80% drain efficiency

✦ Optimized for 902–928 MHz ISM

✦ GaN-on-SiC HEMT technology

✦ Integrated pre-matched architecture

✦ Up to 10:1 VSWR load mismatch tolerance

✦ Designed for thermal stability and long-term operation

✦ Suitable for high-power industrial RF equipment

Application Possibilities

The transistor is targeted at particle accelerator systems, industrial RF heating, plasma-generation equipment and other high-power ISM-band applications. Its high output capability can help equipment manufacturers develop efficient RF generators while reducing the complexity of the RF implementation.

Conclusion

The CLF09H4LS800P combines 800 W RF output capability with more than 80% drain efficiency in the 902–928 MHz ISM band. Its GaN-on-SiC construction, pre-matched architecture and high VSWR tolerance make it a suitable building block for demanding industrial RF energy systems.

Ampleon CLF09H4LS800P Pushes RF Power to 800W

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